semiconductors summary v (br)dss = -60v: r ds(on) = 0.125 : i d = -4.1a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive sot223 package applications dc-dc converters power management functions relay and solenoid driving motor control device marking zxmp 6a17 ZXMP6A17G 1 60v p-channel enhancement mode mosfet provisional issue d - march 2005 advance information device reel size tape width quantity per reel ZXMP6A17Gta 7? 12mm 1000 units ZXMP6A17Gtc 13? 12mm 4000 units ordering information top view pinout s o t 2 2 3
ZXMP6A17G semiconductors advance information 2 provisional issue d - march 2005 parameter symbol limit unit drain-source voltage v dss -60 v gate-source voltage v gs 20 v continuous drain current (v gs = -10v; t a =25c) (b) (v gs = -10v; t a =70c) (b) (v gs = -10v; t a =25c) (a) i d -4.1 -3.3 -3.0 a pulsed drain current (c) i dm -13.7 a continuous source current (body diode) (b) i s -4.8 a pulsed source current (body diode) (c) i sm -13.7 a power dissipation at t a =25c (a) linear derating factor p d 2.0 16 w mw/c power dissipation at t a =25c (b) linear derating factor p d 3.9 31 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum rating parameter symbol value unit junction to ambient (a) r ja 62.5 c/w junction to ambient (b) r ja 32.2 c/w thermal resistance notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 10 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.05 pulse width limited by maximum junction temperature.
ZXMP6A17G semiconductors 3 provisional issue d - march 2005 advance information 1 10 100 10m 100m 1 10 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) characteristics
ZXMP6A17G semiconductors provisional issue d - march 2005 advance information 4 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -60 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1 av ds =-60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.125 0.190 v gs =-10v, i d =-2.2a v gs =-4.5v, i d =-1.8a forward transconductance (1)(3) g fs 4.9 s v ds =-15v,i d =-2.2a dynamic (3) input capacitance c iss 670 pf v ds =-30v, v gs =0v, f=1mhz output capacitance c oss 46.7 pf reverse transfer capacitance c rss 28.0 pf switching (2) (3) turn-on delay time t d(on) 2.4 ns v dd =-30v, i d =-1a r g 6.0 , v gs =-10v rise time t r 3.5 ns turn-off delay time t d(off) 30.0 ns fall time t f 7.4 ns gate charge q g 7.3 nc v ds =-30v,v gs =-5v, i d =-2.2a total gate charge q g 15.1 nc v ds =-30v,v gs =-10v, i d =-2.2a gate-source charge q gs 1.8 nc gate-drain charge q gd 1.9 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25 c, i s =-2a, v gs =0v reverse recovery time (3) t rr 26.4 ns t j =25 c, i f =-1.7a, di/dt= 100a/ s reverse recovery charge (3) q rr 32.7 nc electrical characteristics (at t a = 25c unless otherwise stated) notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMP6A17G semiconductors 5 provisional issue d - march 2005 advance information 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 12345 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 10v 2v 3.5v -v gs 2.5v 4.5v 3v output characteristics t=25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 1.5v 3.5v 3v 2v 4.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds =10v t=25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs =-10v i d =-0.9a v gs(th) v gs =v ds i d = -250ua normalised r ds(on) and v gs( t h) tj junction temperature (c) 4.5v 10v 3v 2v 3.5v 2.5v on-resistance v drain current t=25c -v gs r ds(on) drain-source on-resistance (?) -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) typical characteristics
ZXMP6A17G semiconductors 6 provisional issue d - march 2005 advance information 0.1 1 10 0 100 200 300 400 500 600 700 800 900 1000 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) -v ds -drain-sourcevoltage(v) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 i d = -2.2a v ds = -30v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) typical characteristics
ZXMP6A17G semiconductors provisional issue d - march 2005 7 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 advance information pad layout details package outline dim millimeters inches dim millimeters inches min max min max min max min max a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - ---- package dimensions
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